Refractory contact to a-SiC produced by laser technology methods

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2001
• Main Authors: Fedorenko, L.L., Kiseleov, V.S., Svechnikov, S.V., Yusupov, M.M., Beketov, G.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119279
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Refractory contact to a-SiC produced by laser technology methods / L.L. Fedorenko, V.S. Kiseleov, S.V. Svechnikov, M.M. Yusupov, G.V. Beketov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 192-195. — Бібліогр.: 8 назв. — англ.

Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser annealing (LA). When using an YAG:Nd³⁺ laser, threshold levels and optimal reg...