Boltovets, N., Voitsikhovskyi, D., Konakova, R., Milenin, V., Makara, V., Rudenko, O., & Mel’nichenko, M. (2001). Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them. Semiconductor Physics Quantum Electronics & Optoelectronics.
Чикаго стиль цитування (17-те видання)Boltovets, N.S, D.I Voitsikhovskyi, R.V Konakova, V.V Milenin, V.A Makara, O.V Rudenko, та M.M Mel’nichenko. "Comprehensive Studies of Defect Production and Strained States in Silicon Epitaxial Layers and Device Structures Based on Them." Semiconductor Physics Quantum Electronics & Optoelectronics 2001.
Стиль цитування MLA (8-ме видання)Boltovets, N.S, et al. "Comprehensive Studies of Defect Production and Strained States in Silicon Epitaxial Layers and Device Structures Based on Them." Semiconductor Physics Quantum Electronics & Optoelectronics, 2001.