Boltovets, N., Voitsikhovskyi, D., Konakova, R., Milenin, V., Makara, V., Rudenko, O., & Mel’nichenko, M. (2001). Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationBoltovets, N.S, D.I Voitsikhovskyi, R.V Konakova, V.V Milenin, V.A Makara, O.V Rudenko, and M.M Mel’nichenko. "Comprehensive Studies of Defect Production and Strained States in Silicon Epitaxial Layers and Device Structures Based on Them." Semiconductor Physics Quantum Electronics & Optoelectronics 2001.
MLA (8th ed.) CitationBoltovets, N.S, et al. "Comprehensive Studies of Defect Production and Strained States in Silicon Epitaxial Layers and Device Structures Based on Them." Semiconductor Physics Quantum Electronics & Optoelectronics, 2001.