Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them
Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse cu...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119312 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Boltovets, N.S. Voitsikhovskyi, D.I. Konakova, R.V. Milenin, V.V. Makara, V.A. Rudenko, O.V. Mel’nichenko, M.M. 2017-06-06T11:04:26Z 2017-06-06T11:04:26Z 2001 Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ. 1560-8034 PACS: 07.07D, 07.57H, 81.05Y, 84.40D https://nasplib.isofts.kiev.ua/handle/123456789/119312 Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse current of thermal-generation nature, minority charge carrier lifetime τp in the n-layer and concentration of structural defects (structural perfection of the n⁺-substrate). We advance a model for strained state of multilayer device structures, in particular, those with ohmic and contact layers. The work has been performed within the STCU Program (Project 464). en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them |
| spellingShingle |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them Boltovets, N.S. Voitsikhovskyi, D.I. Konakova, R.V. Milenin, V.V. Makara, V.A. Rudenko, O.V. Mel’nichenko, M.M. |
| title_short |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them |
| title_full |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them |
| title_fullStr |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them |
| title_full_unstemmed |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them |
| title_sort |
comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them |
| author |
Boltovets, N.S. Voitsikhovskyi, D.I. Konakova, R.V. Milenin, V.V. Makara, V.A. Rudenko, O.V. Mel’nichenko, M.M. |
| author_facet |
Boltovets, N.S. Voitsikhovskyi, D.I. Konakova, R.V. Milenin, V.V. Makara, V.A. Rudenko, O.V. Mel’nichenko, M.M. |
| publishDate |
2001 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse current of thermal-generation nature, minority charge carrier lifetime τp in the n-layer and concentration of structural defects (structural perfection of the n⁺-substrate). We advance a model for strained state of multilayer device structures, in particular, those with ohmic and contact layers.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119312 |
| citation_txt |
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ. |
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| first_indexed |
2025-12-07T20:10:07Z |
| last_indexed |
2025-12-07T20:10:07Z |
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