Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2001
• Автори: Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119312
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them / N.S. Boltovets, D.I. Voitsikhovskyi, R.V. Konakova, V.V. Milenin, V.A. Makara, O.V. Rudenko, M.M. Mel’nichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 318-322. — Бібліогр.: 3 назв. — англ.

Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface finish classes 12 and 14). Correlation has been revealed between the reverse cu...