Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact
We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk a...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2001 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119315 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119315 |
|---|---|
| record_format |
dspace |
| spelling |
Shekhovtsov, L.V. 2017-06-06T11:07:29Z 2017-06-06T11:07:29Z 2001 Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS: 73.30.+y, 73.40.Kp, 73.50.Pz https://nasplib.isofts.kiev.ua/handle/123456789/119315 We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures. The author would like to thank R.V. Konakova and V.G. Lyapin for valua le discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| spellingShingle |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact Shekhovtsov, L.V. |
| title_short |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_full |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_fullStr |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_full_unstemmed |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact |
| title_sort |
some features of transverse photovoltage in semiconductor heterostructure and schottky contact |
| author |
Shekhovtsov, L.V. |
| author_facet |
Shekhovtsov, L.V. |
| publishDate |
2001 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk and near interfaces.
An additional unmodulated illumination of the samples during the measurements of the photovoltage spectral curves changes the interaction of photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to put forward models for interaction of photocurrents flowing near the interfaces and obtain the characteristics of the interface uniformity in composite semiconductor structures.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119315 |
| citation_txt |
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ. |
| work_keys_str_mv |
AT shekhovtsovlv somefeaturesoftransversephotovoltageinsemiconductorheterostructureandschottkycontact |
| first_indexed |
2025-12-07T20:04:34Z |
| last_indexed |
2025-12-07T20:04:34Z |
| _version_ |
1850881211908489216 |