Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact

We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky contacts is determined by interaction between photocurrents flowing in the bulk a...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2001
Main Author: Shekhovtsov, L.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119315
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact / L.V. Shekhovtsov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 253-259. — Бібліогр.: 21 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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