Behaviour of manganese impurity in β-ZnP₂

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Kakazej, M., Kudin, A., Pinkovs’ka, M., Tartachnyk, V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119318
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Behaviour of manganese impurity in β-ZnP₂ / M. Kakazej, A. Kudin, M. Pinkovs’ka, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 264-272. — Бібліогр.: 42 назв. — англ.

Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure evolution of irradiated and annealed ZnP₂ was studied by the method of the par...