The impact of laser shock waves on anodic oxide - compound semiconductor interface
The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one o...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119323 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862720097762672640 |
|---|---|
| author | Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. |
| author_facet | Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. |
| citation_txt | The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed. 
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| first_indexed | 2025-12-07T18:23:40Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119323 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:23:40Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. 2017-06-06T12:40:35Z 2017-06-06T12:40:35Z 2001 The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 62.50.+p, 68.35.Dv https://nasplib.isofts.kiev.ua/handle/123456789/119323 The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed. 
 Remove selected en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The impact of laser shock waves on anodic oxide - compound semiconductor interface Article published earlier |
| spellingShingle | The impact of laser shock waves on anodic oxide - compound semiconductor interface Yakovyna, V.S. Berchenko, N.N. Nikiforov, Yu.N. |
| title | The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_full | The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_fullStr | The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_full_unstemmed | The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_short | The impact of laser shock waves on anodic oxide - compound semiconductor interface |
| title_sort | impact of laser shock waves on anodic oxide - compound semiconductor interface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119323 |
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