The impact of laser shock waves on anodic oxide - compound semiconductor interface

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Yakovyna, V.S., Berchenko, N.N., Nikiforov, Yu.N.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119323
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ.

The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one o...