Hopping conductivity in GaSe monocrystals at low temperatures
The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2001 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119326 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862742001681694720 |
|---|---|
| author | Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. |
| author_facet | Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. |
| citation_txt | Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31 and 250.0 ohm•cm, concentration of impurities is 10¹⁵ and 2.0×10¹⁶ cm⁻³, mobilities are equal to 25.0 and 12.0 cm2/V•sec, respectively. It is ascertained that specific resistance weakly depends on temperature at (5…33)K, activation energy of this conductivity is 1.2×10⁻³ eV, and it is determined by hopping mechanism of charge transfer. At temperatures (33…100)K, activation energy of conductivity is 7.8×10⁻² eV, and it is connected with hole transfer in empty band.
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| first_indexed | 2025-12-07T20:23:00Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119326 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:23:00Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. 2017-06-06T12:55:00Z 2017-06-06T12:55:00Z 2001 Hopping conductivity in GaSe monocrystals at low temperatures / A.M. Pashayev, A.R. Gadjiyev, T.B. Tagiyev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 287-289. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 72.20.F; 73.50.F; 84.37 https://nasplib.isofts.kiev.ua/handle/123456789/119326 The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. Specific resistance of GaSe doped by cadmium at room temperature is equal to 31 and 250.0 ohm•cm, concentration of impurities is 10¹⁵ and 2.0×10¹⁶ cm⁻³, mobilities are equal to 25.0 and 12.0 cm2/V•sec, respectively. It is ascertained that specific resistance weakly depends on temperature at (5…33)K, activation energy of this conductivity is 1.2×10⁻³ eV, and it is determined by hopping mechanism of charge transfer. At temperatures (33…100)K, activation energy of conductivity is 7.8×10⁻² eV, and it is connected with hole transfer in empty band. The authors express grateful acknowledgement to Prof. Gashimzadeh F.М. for useful discussions of experimental results. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Hopping conductivity in GaSe monocrystals at low temperatures Article published earlier |
| spellingShingle | Hopping conductivity in GaSe monocrystals at low temperatures Pashayev, A.M. Gadjiyev, A.R. Tagiyev, T.B. Abbasova, T.M. |
| title | Hopping conductivity in GaSe monocrystals at low temperatures |
| title_full | Hopping conductivity in GaSe monocrystals at low temperatures |
| title_fullStr | Hopping conductivity in GaSe monocrystals at low temperatures |
| title_full_unstemmed | Hopping conductivity in GaSe monocrystals at low temperatures |
| title_short | Hopping conductivity in GaSe monocrystals at low temperatures |
| title_sort | hopping conductivity in gase monocrystals at low temperatures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119326 |
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