Optical transmittance of 2D macroporous silicon structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2001
• Hauptverfasser: Karachevtseva, L.A., Lytvynenko, O.O., Malovichko, E.O., Stronska, O.J., Busaneva, E.V., Gorchinsky, O.D.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119327
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Optical transmittance of 2D macroporous silicon structures / L.A. Karachevtseva, O.O. Lytvynenko, E.O. Malovichko, O.J. Stronska, E.V. Busaneva, O.D. Gorchinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 347-351. — Бібліогр.: 17 назв. — англ.

Optical transmittance by 2D macroporous silicon structures was investigated in direction parallel to pores. Absolute photonic band gap was measured for wavelengths between one and two optical periods of macroporous silicon structure. For wavelengths less than optical period of macropores there are an essential reduction in transmittance of electromagnetic radiation to (3-6)•10⁻³ apparently the homogeneous material and the step formation. Transmission spectra of macroporous silicon as well as steps were explained by a model of directed and decay optical modes formed by macroporous silicon as a short wave-guide structure with a large contrast in dielectric constants of the macropore and the silicon matrix.