Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2001
Main Authors: Konakova, R.V., Milenin, V.V., Voitsikhovskyi, D.I., Kamalov, A.B., Kolyadina, E.Yu., Lytvyn, P.M., Lytvyn, O.S., Matveeva, L.A., Prokopenko, I.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119331
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119331
record_format dspace
spelling Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
2017-06-06T13:08:26Z
2017-06-06T13:08:26Z
2001
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ.
1560-8034
PACS 61.76.C, 73.40.K, 84.40
https://nasplib.isofts.kiev.ua/handle/123456789/119331
For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
spellingShingle Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
title_short Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_full Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_fullStr Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_full_unstemmed Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
title_sort ordering of lateral nonuniformity of tibx film and transition layer in the tibx-gaas system
author Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
author_facet Konakova, R.V.
Milenin, V.V.
Voitsikhovskyi, D.I.
Kamalov, A.B.
Kolyadina, E.Yu.
Lytvyn, P.M.
Lytvyn, O.S.
Matveeva, L.A.
Prokopenko, I.V.
publishDate 2001
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119331
citation_txt Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ.
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AT kamalovab orderingoflateralnonuniformityoftibxfilmandtransitionlayerinthetibxgaassystem
AT kolyadinaeyu orderingoflateralnonuniformityoftibxfilmandtransitionlayerinthetibxgaassystem
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first_indexed 2025-12-07T16:51:29Z
last_indexed 2025-12-07T16:51:29Z
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