Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system
For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2001 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119331 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862704615538032640 |
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| author | Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. |
| author_facet | Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. |
| citation_txt | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment.
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| first_indexed | 2025-12-07T16:51:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119331 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:51:29Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. 2017-06-06T13:08:26Z 2017-06-06T13:08:26Z 2001 Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system / R.V. Konakova, V.V. Milenin, D.I. Voitsikhovskyi, A.B. Kamalov, E.Yu. Kolyadina, P.M. Lytvyn, O.S. Lytvyn, L.A. Matveeva, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 298-300. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 61.76.C, 73.40.K, 84.40 https://nasplib.isofts.kiev.ua/handle/123456789/119331 For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, illuminance of 1.5 W/cm²). This correlates with improvement of the TiBx-n-n⁺-GaAs diode structure parameters after similar microwave treatment. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system Article published earlier |
| spellingShingle | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system Konakova, R.V. Milenin, V.V. Voitsikhovskyi, D.I. Kamalov, A.B. Kolyadina, E.Yu. Lytvyn, P.M. Lytvyn, O.S. Matveeva, L.A. Prokopenko, I.V. |
| title | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
| title_full | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
| title_fullStr | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
| title_full_unstemmed | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
| title_short | Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system |
| title_sort | ordering of lateral nonuniformity of tibx film and transition layer in the tibx-gaas system |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119331 |
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