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The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape and size of components can change stresses in the silicon substrate by an order,...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2001
Hauptverfasser: Agueev, O.A., Svetlichny, A.M.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2001
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119334
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating / O.A. Agueev, A.M. Svetlichny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 307-312. — Бібліогр.: 15 назв. — англ.

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