Study of postimplantation annealing of SiC
The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o and 500 oC with Al ions annealed at 1600 to 2000 oC. The objective was to stud...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2001 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119335 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Study of postimplantation annealing of SiC / S.F. Avramenko, V.S. Kiselev, B.N. Romanyuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 249-252. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862623769676218368 |
|---|---|
| author | Avramenko, S.F. Kiselev, V.S. Romanyuk, B.N. Valakh, M.Ya. |
| author_facet | Avramenko, S.F. Kiselev, V.S. Romanyuk, B.N. Valakh, M.Ya. |
| citation_txt | Study of postimplantation annealing of SiC / S.F. Avramenko, V.S. Kiselev, B.N. Romanyuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 249-252. — Бібліогр.: 6 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o and 500 oC with Al ions annealed at 1600 to 2000 oC. The objective was to study processes of defect annealing and activation of implanted aluminum to determine the optimal parameters of the postimplantation annealing mode. It is shown that processes of radiation defect annealing and implanted aluminum activation are characterized by essentially different times that depend on the annealing and implantation conditions. Measurements of the open-circuit photovoltage U enable one to check the aluminum activation process and optimize the annealing conditions.
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| first_indexed | 2025-12-07T13:30:16Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119335 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:30:16Z |
| publishDate | 2001 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Avramenko, S.F. Kiselev, V.S. Romanyuk, B.N. Valakh, M.Ya. 2017-06-06T13:31:41Z 2017-06-06T13:31:41Z 2001 Study of postimplantation annealing of SiC / S.F. Avramenko, V.S. Kiselev, B.N. Romanyuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 249-252. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 68.55.L; 77.84.B https://nasplib.isofts.kiev.ua/handle/123456789/119335 The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o and 500 oC with Al ions annealed at 1600 to 2000 oC. The objective was to study processes of defect annealing and activation of implanted aluminum to determine the optimal parameters of the postimplantation annealing mode. It is shown that processes of radiation defect annealing and implanted aluminum activation are characterized by essentially different times that depend on the annealing and implantation conditions. Measurements of the open-circuit photovoltage U enable one to check the aluminum activation process and optimize the annealing conditions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Study of postimplantation annealing of SiC Article published earlier |
| spellingShingle | Study of postimplantation annealing of SiC Avramenko, S.F. Kiselev, V.S. Romanyuk, B.N. Valakh, M.Ya. |
| title | Study of postimplantation annealing of SiC |
| title_full | Study of postimplantation annealing of SiC |
| title_fullStr | Study of postimplantation annealing of SiC |
| title_full_unstemmed | Study of postimplantation annealing of SiC |
| title_short | Study of postimplantation annealing of SiC |
| title_sort | study of postimplantation annealing of sic |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119335 |
| work_keys_str_mv | AT avramenkosf studyofpostimplantationannealingofsic AT kiselevvs studyofpostimplantationannealingofsic AT romanyukbn studyofpostimplantationannealingofsic AT valakhmya studyofpostimplantationannealingofsic |