Study of postimplantation annealing of SiC
The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o and 500 oC with Al ions annealed at 1600 to 2000 oC. The objective was to stud...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2001 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2001
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119335 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Study of postimplantation annealing of SiC / S.F. Avramenko, V.S. Kiselev, B.N. Romanyuk, M.Ya. Valakh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 249-252. — Бібліогр.: 6 назв. — англ. |
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