Order parameter phase locking as a cause of a zero bias peak in the differential tunneling conductance of bilayers with electron-hole pairing

• Опубліковано в: : Физика низких температур
• Дата: 2004
• Автори: Bezuglyj, A.I., Shevchenko, S.I.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2004
• Теми: Свеpхпpоводимость, в том числе высокотемпеpатуpная
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119475
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Order parameter phase locking as a cause of a zero bias peak in the differential tunneling conductance of bilayers with electron-hole pairing / A.I. Bezuglyj, S.I. Shevchenko // Физика низких температур. — 2004. — Т. 30, № 3. — С. 282-287. — Бібліогр.: 21 назв. — англ.

In n—p bilayer systems an exotic phase-coherent state emerges due to Coulomb pairing of
 n-layer electrons with p-layer holes. Unlike Josephson junctions, the order parameter phase may be
 locked by matrix elements of interlayer tunneling in n—p bilayers. Here we show how the phase
 locking phenomenon specifies the response of the electron—hole condensate to interlayer voltages.
 In the absence of an applied magnetic field, the phase is steady-state (locked) at low interlayer
 voltages, V < Vc, but the phase increases monotonically with time (is unlocked) at V > Vc. The
 change in the system dynamics at V = Vc gives rise to a peak in the differential tunneling conductance.
 The peak width Vc is proportional to the absolute value of the tunneling matrix element
 |T₁₂|, but its height does not depend on |T12|; thus the peak is sharp for small |T₁₂|. An in-plane magnetic
 field reduces the peak height considerably. The present results are in qualitative agreement
 with the zero-bias peak behavior that has recently been observed in bilayer quantum Hall
 pseudoferromagnets with spontaneous interlayer phase coherence.