Hereditary functional individuality of semiconductor sensors
By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-g...
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| Veröffentlicht in: | Functional Materials |
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| Datum: | 2015 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
НТК «Інститут монокристалів» НАН України
2015
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| Schlagworte: | |
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119556 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed.
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| ISSN: | 1027-5495 |