Hereditary functional individuality of semiconductor sensors
By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-g...
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| Опубліковано в: : | Functional Materials |
|---|---|
| Дата: | 2015 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119556 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119556 |
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Migal, V.P. But, A.V. Migal, G.V. Klymenko, I.A. 2017-06-07T11:50:05Z 2017-06-07T11:50:05Z 2015 Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ. 1027-5495 DOI: http://dx.doi.org/10.15407/fm22.03.387 https://nasplib.isofts.kiev.ua/handle/123456789/119556 By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed. en НТК «Інститут монокристалів» НАН України Functional Materials Devices and instruments Hereditary functional individuality of semiconductor sensors Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Hereditary functional individuality of semiconductor sensors |
| spellingShingle |
Hereditary functional individuality of semiconductor sensors Migal, V.P. But, A.V. Migal, G.V. Klymenko, I.A. Devices and instruments |
| title_short |
Hereditary functional individuality of semiconductor sensors |
| title_full |
Hereditary functional individuality of semiconductor sensors |
| title_fullStr |
Hereditary functional individuality of semiconductor sensors |
| title_full_unstemmed |
Hereditary functional individuality of semiconductor sensors |
| title_sort |
hereditary functional individuality of semiconductor sensors |
| author |
Migal, V.P. But, A.V. Migal, G.V. Klymenko, I.A. |
| author_facet |
Migal, V.P. But, A.V. Migal, G.V. Klymenko, I.A. |
| topic |
Devices and instruments |
| topic_facet |
Devices and instruments |
| publishDate |
2015 |
| language |
English |
| container_title |
Functional Materials |
| publisher |
НТК «Інститут монокристалів» НАН України |
| format |
Article |
| description |
By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-geometric parameters and indicators of integrative energy balance of photo-induced processes are applied. To analyze the structure of the photosensitivity bands the matrix of balance indicators is proposed.
|
| issn |
1027-5495 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119556 |
| citation_txt |
Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ. |
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AT migalvp hereditaryfunctionalindividualityofsemiconductorsensors AT butav hereditaryfunctionalindividualityofsemiconductorsensors AT migalgv hereditaryfunctionalindividualityofsemiconductorsensors AT klymenkoia hereditaryfunctionalindividualityofsemiconductorsensors |
| first_indexed |
2025-12-07T19:09:03Z |
| last_indexed |
2025-12-07T19:09:03Z |
| _version_ |
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