Hereditary functional individuality of semiconductor sensors

• Veröffentlicht in: Functional Materials
• Datum: 2015
• Hauptverfasser: Migal, V.P., But, A.V., Migal, G.V., Klymenko, I.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: НТК «Інститут монокристалів» НАН України 2015
• Schlagworte: Devices and instruments
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119556
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Hereditary functional individuality of semiconductor sensors / V.P. Migal, A.V. But, G.V. Migal, I.A. Klymenko // Functional Materials. — 2015. — Т. 22, № 3. — С. 387-391. — Бібліогр.: 16 назв. — англ.

By geometrisation of the natural and impurity bands of photocurrent spectrum of semiconductor sensors in the parameter space it is shown that individual features in their structures are technologically inherited. In analysis of the natural and impurity photocurrent bands the universal differential-g...