Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence i...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119561 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl / N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 25-30. — Бібліогр.: 31 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862670082655649792 |
|---|---|
| author | Vakhnyak, N.D. Krylyuk, S.G. Kryuchenko, Yu.V. Kupchak, I.M. |
| author_facet | Vakhnyak, N.D. Krylyuk, S.G. Kryuchenko, Yu.V. Kupchak, I.M. |
| citation_txt | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl / N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 25-30. — Бібліогр.: 31 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors.
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| first_indexed | 2025-12-07T15:29:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119561 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:29:28Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vakhnyak, N.D. Krylyuk, S.G. Kryuchenko, Yu.V. Kupchak, I.M. 2017-06-07T12:09:21Z 2017-06-07T12:09:21Z 2002 Influence of g-irradiation on photoluminescence spectra of CdTe:Cl / N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 25-30. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS: 78.55.Et; 78.55.-m https://nasplib.isofts.kiev.ua/handle/123456789/119561 Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors. We wish to express our gratitude to О. P. Shakhov (lnstitute of Physics, NASU) for irradiation of CdTe samples and to О. l. Vlasenko and A.Baidulaeva (lnstitute of Semiconductor Physics, NASU) for stimulating discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of g-irradiation on photoluminescence spectra of CdTe:Cl Article published earlier |
| spellingShingle | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl Vakhnyak, N.D. Krylyuk, S.G. Kryuchenko, Yu.V. Kupchak, I.M. |
| title | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl |
| title_full | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl |
| title_fullStr | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl |
| title_full_unstemmed | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl |
| title_short | Influence of g-irradiation on photoluminescence spectra of CdTe:Cl |
| title_sort | influence of g-irradiation on photoluminescence spectra of cdte:cl |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119561 |
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