Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119563 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.
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| ISSN: | 1560-8034 |