Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates

A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2002
1. Verfasser: Tkach, V.N.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119563
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119563
record_format dspace
spelling Tkach, V.N.
2017-06-07T12:24:52Z
2017-06-07T12:24:52Z
2002
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS: 61.10.N, 61.66, 68.35.B
https://nasplib.isofts.kiev.ua/handle/123456789/119563
A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
spellingShingle Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
Tkach, V.N.
title_short Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
title_full Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
title_fullStr Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
title_full_unstemmed Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
title_sort divergent-beam x-ray structural studies of a disturbed surface layer in silicon plates
author Tkach, V.N.
author_facet Tkach, V.N.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119563
citation_txt Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ.
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first_indexed 2025-12-07T19:18:50Z
last_indexed 2025-12-07T19:18:50Z
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