Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates
A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119563 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119563 |
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Tkach, V.N. 2017-06-07T12:24:52Z 2017-06-07T12:24:52Z 2002 Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 61.10.N, 61.66, 68.35.B https://nasplib.isofts.kiev.ua/handle/123456789/119563 A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
| spellingShingle |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates Tkach, V.N. |
| title_short |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
| title_full |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
| title_fullStr |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
| title_full_unstemmed |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates |
| title_sort |
divergent-beam x-ray structural studies of a disturbed surface layer in silicon plates |
| author |
Tkach, V.N. |
| author_facet |
Tkach, V.N. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates after chemico-mechanical polishing. The intensity of X-ray reflection from the lattice planes intersecting a polished surface of a plate characterizes the perfection degree of the disturbed layer, is of a periodic nature and exhibits a tendency to damp deep within the plate.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119563 |
| citation_txt |
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates / V.N. Tkach // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 36-38. — Бібліогр.: 6 назв. — англ. |
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AT tkachvn divergentbeamxraystructuralstudiesofadisturbedsurfacelayerinsiliconplates |
| first_indexed |
2025-12-07T19:18:50Z |
| last_indexed |
2025-12-07T19:18:50Z |
| _version_ |
1850878335065784320 |