Interface roughness induced intrasubband scattering in a quantum well under an electric field
Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119564 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862576088843026432 |
|---|---|
| author | Ibragimov, G.B. |
| author_facet | Ibragimov, G.B. |
| citation_txt | Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case.
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| first_indexed | 2025-11-26T14:24:20Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119564 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T14:24:20Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ibragimov, G.B. 2017-06-07T12:25:29Z 2017-06-07T12:25:29Z 2002 Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS: 68.65,73.20.D https://nasplib.isofts.kiev.ua/handle/123456789/119564 Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case. The author would like to thank Prof. М.I. Aliev and Prof. F.М. Gashimzade for helpful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Interface roughness induced intrasubband scattering in a quantum well under an electric field Article published earlier |
| spellingShingle | Interface roughness induced intrasubband scattering in a quantum well under an electric field Ibragimov, G.B. |
| title | Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_full | Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_fullStr | Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_full_unstemmed | Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_short | Interface roughness induced intrasubband scattering in a quantum well under an electric field |
| title_sort | interface roughness induced intrasubband scattering in a quantum well under an electric field |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119564 |
| work_keys_str_mv | AT ibragimovgb interfaceroughnessinducedintrasubbandscatteringinaquantumwellunderanelectricfield |