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Interface roughness induced intrasubband scattering in a quantum well under an electric field

Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2002
Main Author: Ibragimov, G.B.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119564
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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