Interface roughness induced intrasubband scattering in a quantum well under an electric field

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• ISSN: 1560-8034
• 1. Verfasser: Ibragimov, G.B.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119564
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ.

Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the...