Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs
InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is pr...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119565 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs / A.I. Klimovskaya, N.N. Grigor’ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 42-45. — Бібліогр.: 13 назв. — англ. |
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Klimovskaya, A.I. Grigor’ev, N.N. Gule, E.G. Dryha, Yu.A. Litovchenko, V.G. 2017-06-07T12:28:25Z 2017-06-07T12:28:25Z 2002 Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs / A.I. Klimovskaya, N.N. Grigor’ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 42-45. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 78.55.Cr, 78.67.De, 85.35.Be https://nasplib.isofts.kiev.ua/handle/123456789/119565 InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is probably a result of alternating content of In raised only in highly strained layers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs |
| spellingShingle |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs Klimovskaya, A.I. Grigor’ev, N.N. Gule, E.G. Dryha, Yu.A. Litovchenko, V.G. |
| title_short |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs |
| title_full |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs |
| title_fullStr |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs |
| title_full_unstemmed |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs |
| title_sort |
instability of homogeneous composition of highly strained quantum wells in heterostructures gaas/inxga₁₋xas/gaas |
| author |
Klimovskaya, A.I. Grigor’ev, N.N. Gule, E.G. Dryha, Yu.A. Litovchenko, V.G. |
| author_facet |
Klimovskaya, A.I. Grigor’ev, N.N. Gule, E.G. Dryha, Yu.A. Litovchenko, V.G. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In highly strained layers several PL bands were observed instead one band. This is probably a result of alternating content of In raised only in highly strained layers.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119565 |
| citation_txt |
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs / A.I. Klimovskaya, N.N. Grigor’ev, E.G. Gule, Yu.A. Dryha, V.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 42-45. — Бібліогр.: 13 назв. — англ. |
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2025-12-07T20:06:16Z |
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