Current flow mechanisms in p-i-n structures based on cadmium telluride
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark curre...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2002 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119566 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862687217074307072 |
|---|---|
| author | Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| author_facet | Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| citation_txt | Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.
|
| first_indexed | 2025-12-07T16:06:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119566 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:06:01Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. 2017-06-07T12:35:03Z 2017-06-07T12:35:03Z 2002 Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 73.40.-c,73.40.Ty https://nasplib.isofts.kiev.ua/handle/123456789/119566 Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Current flow mechanisms in p-i-n structures based on cadmium telluride Article published earlier |
| spellingShingle | Current flow mechanisms in p-i-n structures based on cadmium telluride Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| title | Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_full | Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_fullStr | Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_full_unstemmed | Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_short | Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_sort | current flow mechanisms in p-i-n structures based on cadmium telluride |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119566 |
| work_keys_str_mv | AT gorleypm currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT demychmv currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT makhniyvp currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT horvathzsj currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT shenderovskyva currentflowmechanismsinpinstructuresbasedoncadmiumtelluride |