Current flow mechanisms in p-i-n structures based on cadmium telluride
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark curre...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2002 |
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119566 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119566 |
|---|---|
| record_format |
dspace |
| spelling |
Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. 2017-06-07T12:35:03Z 2017-06-07T12:35:03Z 2002 Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 73.40.-c,73.40.Ty https://nasplib.isofts.kiev.ua/handle/123456789/119566 Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Current flow mechanisms in p-i-n structures based on cadmium telluride Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| spellingShingle |
Current flow mechanisms in p-i-n structures based on cadmium telluride Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| title_short |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_full |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_fullStr |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_full_unstemmed |
Current flow mechanisms in p-i-n structures based on cadmium telluride |
| title_sort |
current flow mechanisms in p-i-n structures based on cadmium telluride |
| author |
Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| author_facet |
Gorley, P.M. Demych, M.V. Makhniy, V.P. Horvath, Zs.J. Shenderovsky, V.A. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119566 |
| citation_txt |
Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ. |
| work_keys_str_mv |
AT gorleypm currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT demychmv currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT makhniyvp currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT horvathzsj currentflowmechanismsinpinstructuresbasedoncadmiumtelluride AT shenderovskyva currentflowmechanismsinpinstructuresbasedoncadmiumtelluride |
| first_indexed |
2025-12-07T16:06:01Z |
| last_indexed |
2025-12-07T16:06:01Z |
| _version_ |
1850866203627618304 |