Current flow mechanisms in p-i-n­ structures based on cadmium telluride

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Gorley, P.M., Demych, M.V., Makhniy, V.P., Horvath, Zs.J., Shenderovsky, V.A.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119566
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Current flow mechanisms in p-i-n­ structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ.

Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark curre...