Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures

• Опубліковано в: : Semiconductor Physics Quantum Electronics & Optoelectronics
• Дата: 2002
• Автори: Tkachuk, A.I., Tsarenko, O.N., Ryabets, S.I.
• Формат: Стаття
• Мова: Англійська
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Онлайн доступ: https://nasplib.isofts.kiev.ua/handle/123456789/119567
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures / A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 51-57. — Бібліогр.: 20 назв. — англ.

The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a programmatic refrigeration rate of 0.1-0.2 K/min and a temperature reduction range of DT=5-10 K. The laboratory methodology of the production of Cu/δ-layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ /In Schottky barrier structures by thermal vacuum deposition has been developed. The current- and farad-voltage characteristics of these structures have been measured at the 77 K, and the dependence of the diode electro-physical properties on the δ-layer width has been studied.