Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Tkachuk, A.I., Tsarenko, O.N., Ryabets, S.I.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119567
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures / A.I. Tkachuk, O.N. Tsarenko, S.I. Ryabets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 51-57. — Бібліогр.: 20 назв. — англ.

The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth temperature region 773-873 K by the liquid phase epitaxy technique at a program...