Atomic and electronic structure of a-SiC

• Datum: 2002
• Hauptverfasser: Ivashchenko, V.I., Shevchenko, V.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Schriftenreihe: Semiconductor Physics Quantum Electronics & Optoelectronics
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119570
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Atomic and electronic structure of a-SiC / V.I. Ivashchenko, V.I. Shevchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 16-24. — Бібліогр.: 24 назв. — англ.

Molecular dynamics (MD) simulations based on an empirical potential approach have provided detailed information about chemical ordering and the structural short-range order in stoichiometric amorphous silicon carbide (a-SiC). Recursion band structure calculations based on amorphous geometries obtain...