Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure

The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transfo...

Full description

Saved in:
Bibliographic Details
Published in:Физика низких температур
Date:2014
Main Author: Kozyrev, A.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2014
Subjects:
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/119607
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure / A. Kozyrev // Физика низких температур. — 2014. — Т. 40, № 8. — С. 964-967. — Бібліогр.: 10 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119607
record_format dspace
spelling Kozyrev, A.
2017-06-07T16:43:26Z
2017-06-07T16:43:26Z
2014
Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure / A. Kozyrev // Физика низких температур. — 2014. — Т. 40, № 8. — С. 964-967. — Бібліогр.: 10 назв. — англ.
0132-6414
PACS 74.70.Ad, 74.62.Dh, 74.62.Fj
https://nasplib.isofts.kiev.ua/handle/123456789/119607
The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transformation of discontinuous oxygen enriched layers into separately located Mg–B–O inclusions in MgB₂. Ti and SiC additions can influence the oxygen and boron distribution, but cannot change the type of pinning at relatively low temperatures.
en
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
Физика низких температур
Международная научно-практическая конференция «Нанотехнологии и наноматериалы»
Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
spellingShingle Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
Kozyrev, A.
Международная научно-практическая конференция «Нанотехнологии и наноматериалы»
title_short Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
title_full Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
title_fullStr Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
title_full_unstemmed Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure
title_sort effect of temperature and pressure to pinning centers in bulk mgb₂ under high pressure
author Kozyrev, A.
author_facet Kozyrev, A.
topic Международная научно-практическая конференция «Нанотехнологии и наноматериалы»
topic_facet Международная научно-практическая конференция «Нанотехнологии и наноматериалы»
publishDate 2014
language English
container_title Физика низких температур
publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
format Article
description The MgB₂-based samples were synthesized at 2 GPa at 800 and 1050 °C for 1 hour with and without Ti and SiC. X-ray, SEM and Auger structural studies showed that with increasing of manufacturing temperature grain boundary pinning transforms into point pinning, which is well correlated with the transformation of discontinuous oxygen enriched layers into separately located Mg–B–O inclusions in MgB₂. Ti and SiC additions can influence the oxygen and boron distribution, but cannot change the type of pinning at relatively low temperatures.
issn 0132-6414
url https://nasplib.isofts.kiev.ua/handle/123456789/119607
citation_txt Effect of temperature and pressure to pinning centers in bulk MgB₂ under high pressure / A. Kozyrev // Физика низких температур. — 2014. — Т. 40, № 8. — С. 964-967. — Бібліогр.: 10 назв. — англ.
work_keys_str_mv AT kozyreva effectoftemperatureandpressuretopinningcentersinbulkmgb2underhighpressure
first_indexed 2025-12-07T16:54:38Z
last_indexed 2025-12-07T16:54:38Z
_version_ 1850869262332198912