Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals
A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield...
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| Опубліковано в: : | Functional Materials |
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| Дата: | 2015 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
НТК «Інститут монокристалів» НАН України
2015
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| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119614 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals / E. Galenin, M. Biatov, I. Gerasymov, B. Grinyov, O. Sidletskiy, V. Baranov, J. Budagov, Yu. Davydov, V. Glagolev // Functional Materials. — 2015. — Т. 22, № 4. — С. 423-428. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862748099453124608 |
|---|---|
| author | Galenin, E. Biatov, M. Gerasymov, I. Grinyov, B. Sidletskiy, O. Baranov, V. Budagov, J. Davydov, Yu. Glagolev, V. |
| author_facet | Galenin, E. Biatov, M. Gerasymov, I. Grinyov, B. Sidletskiy, O. Baranov, V. Budagov, J. Davydov, Yu. Glagolev, V. |
| citation_txt | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals / E. Galenin, M. Biatov, I. Gerasymov, B. Grinyov, O. Sidletskiy, V. Baranov, J. Budagov, Yu. Davydov, V. Glagolev // Functional Materials. — 2015. — Т. 22, № 4. — С. 423-428. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Functional Materials |
| description | A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield, energy resolution, decay constants and Si⁴⁺/Ge⁴⁺ ratio in the crystals are discussed with regard to ongoing experiments on high energy physics. Crystal composition with better energy resolution 16.2 % at 662 keV irradiation was obtained.
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| first_indexed | 2025-12-07T20:54:05Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119614 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1027-5495 |
| language | English |
| last_indexed | 2025-12-07T20:54:05Z |
| publishDate | 2015 |
| publisher | НТК «Інститут монокристалів» НАН України |
| record_format | dspace |
| spelling | Galenin, E. Biatov, M. Gerasymov, I. Grinyov, B. Sidletskiy, O. Baranov, V. Budagov, J. Davydov, Yu. Glagolev, V. 2017-06-07T18:10:58Z 2017-06-07T18:10:58Z 2015 Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals / E. Galenin, M. Biatov, I. Gerasymov, B. Grinyov, O. Sidletskiy, V. Baranov, J. Budagov, Yu. Davydov, V. Glagolev // Functional Materials. — 2015. — Т. 22, № 4. — С. 423-428. — Бібліогр.: 20 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm22.04.423 https://nasplib.isofts.kiev.ua/handle/123456789/119614 A full range of BGSO crystals from BGO to BSO was grown by the Czochralksi method. A set of procedures such as changing of stoichiometry, recrystallization and thermal treatment was applied to improve optical and scintillation parameters of the crystals. The relationships between scintillation yield, energy resolution, decay constants and Si⁴⁺/Ge⁴⁺ ratio in the crystals are discussed with regard to ongoing experiments on high energy physics. Crystal composition with better energy resolution 16.2 % at 662 keV irradiation was obtained. en НТК «Інститут монокристалів» НАН України Functional Materials Characterization and properties Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals Article published earlier |
| spellingShingle | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals Galenin, E. Biatov, M. Gerasymov, I. Grinyov, B. Sidletskiy, O. Baranov, V. Budagov, J. Davydov, Yu. Glagolev, V. Characterization and properties |
| title | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals |
| title_full | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals |
| title_fullStr | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals |
| title_full_unstemmed | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals |
| title_short | Engineering of mixed Bi₄(GexSi₁₋x)₃O₁₂ scintillation crystals |
| title_sort | engineering of mixed bi₄(gexsi₁₋x)₃o₁₂ scintillation crystals |
| topic | Characterization and properties |
| topic_facet | Characterization and properties |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119614 |
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