Efficiency limit for diffusion silicon solar cells at concentrated illumination
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge c...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Дата: | 1999 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119858 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119858 |
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Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. 2017-06-10T07:44:12Z 2017-06-10T07:44:12Z 1999 Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J https://nasplib.isofts.kiev.ua/handle/123456789/119858 A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Efficiency limit for diffusion silicon solar cells at concentrated illumination Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| spellingShingle |
Efficiency limit for diffusion silicon solar cells at concentrated illumination Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. |
| title_short |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_full |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_fullStr |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_full_unstemmed |
Efficiency limit for diffusion silicon solar cells at concentrated illumination |
| title_sort |
efficiency limit for diffusion silicon solar cells at concentrated illumination |
| author |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. |
| author_facet |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. Serba, A.A. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive radiation has been theoretically simulated, the light absorption by free charge carriers in heavily doped regions in AM0 conditions was taken into account. It was found that the efficiency of photoconversion η at K ≈ 100 can be as high as 27%.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119858 |
| citation_txt |
Efficiency limit for diffusion silicon solar cells at concentrated illumination / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko, A.A. Serba // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 45-49. — Бібліогр.: 15 назв. — англ. |
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