Evidence for photochemical transformations in porous silicon

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Shevchenko, V.B., Makara, V.A., Vakulenko, O.V., Dacenko, O.I., Rudenko, O.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119859
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Evidence for photochemical transformations in porous silicon / V.B. Shevchenko, V.A. Makara, O.V. Vakulenko, O.I. Dacenko, O.V. Rudenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 50-53. — Бібліогр.: 17 назв. — англ.

The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase rapidly under UV irradiation and to flatten out in several hours. The subseque...