Investigation of the photoelastic effect in si at high values of the absorptivity
The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation ch...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 1999 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119860 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Summary: | The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation characteristics of this effect has been measured. The main results obtained for probing light wavelengths from the range of crystal transparency are in a good accordance with conclusions of previons studies. In the range of strong absorption, a considerable change of effect characteristic shapes was found, and their satisfactory accordance with results of theoretical estimations was also ascertained.
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| ISSN: | 1560-8034 |