Investigation of the photoelastic effect in si at high values of the absorptivity
The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation ch...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 1999 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119860 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862665870259519488 |
|---|---|
| author | Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. |
| author_facet | Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. |
| citation_txt | Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation characteristics of this effect has been measured. The main results obtained for probing light wavelengths from the range of crystal transparency are in a good accordance with conclusions of previons studies. In the range of strong absorption, a considerable change of effect characteristic shapes was found, and their satisfactory accordance with results of theoretical estimations was also ascertained.
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| first_indexed | 2025-12-07T15:18:18Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119860 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:18:18Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. 2017-06-10T07:45:35Z 2017-06-10T07:45:35Z 1999 Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS 78.20.C https://nasplib.isofts.kiev.ua/handle/123456789/119860 The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation characteristics of this effect has been measured. The main results obtained for probing light wavelengths from the range of crystal transparency are in a good accordance with conclusions of previons studies. In the range of strong absorption, a considerable change of effect characteristic shapes was found, and their satisfactory accordance with results of theoretical estimations was also ascertained. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Investigation of the photoelastic effect in si at high values of the absorptivity Article published earlier |
| spellingShingle | Investigation of the photoelastic effect in si at high values of the absorptivity Boiko, I.I. Venger, Ye.F. Nikitenko, E.V. Serdega, B.K. |
| title | Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_full | Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_fullStr | Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_full_unstemmed | Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_short | Investigation of the photoelastic effect in si at high values of the absorptivity |
| title_sort | investigation of the photoelastic effect in si at high values of the absorptivity |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119860 |
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