Investigation of the photoelastic effect in si at high values of the absorptivity

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Boiko, I.I., Venger, Ye.F., Nikitenko, E.V., Serdega, B.K.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119860
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Investigation of the photoelastic effect in si at high values of the absorptivity / I.I. Boiko, Ye.F. Venger, E.V. Nikitenko, B.K. Serdega // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 54-58. — Бібліогр.: 8 назв. — англ.

The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band absorption, polarization modulation of reffected emission was used. Deformation ch...