APA (7th ed.) Citation

Indutnyi, I., Shepeliavyi, P., & Indutnyi, V. (1999). Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers. Semiconductor Physics Quantum Electronics & Optoelectronics.

Chicago Style (17th ed.) Citation

Indutnyi, I.Z, P.E Shepeliavyi, and V.I Indutnyi. "Relaxation of Photodarkening in SiO-As₂(S,Se)₃ Composite Layers." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.

MLA (8th ed.) Citation

Indutnyi, I.Z, et al. "Relaxation of Photodarkening in SiO-As₂(S,Se)₃ Composite Layers." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.

Warning: These citations may not always be 100% accurate.