Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119861
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers / I.Z. Indutnyi, P.E. Shepeliavyi, V.I. Indutnyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 2. — С. 59-62. — Бібліогр.: 11 назв. — англ.

Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle si...