Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119864 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862723016155201536 |
|---|---|
| author | Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. |
| author_facet | Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. |
| citation_txt | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic.
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| first_indexed | 2025-12-07T18:39:20Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119864 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:39:20Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. 2017-06-10T08:01:34Z 2017-06-10T08:01:34Z 1999 Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS: 73.30; 85.30.H, K https://nasplib.isofts.kiev.ua/handle/123456789/119864 The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic. The work is supported by STCU, project 464. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs Article published earlier |
| spellingShingle | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs Venger, E.F. Beliaev, A.A. Boltovets, N.S. Ermolovich, I.B. Ivanov, V.N. Konakova, R.V. Milenin, V.V. Voitsikhovski, D.I. Figielski, T. Makosa, A. |
| title | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_full | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_fullStr | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_full_unstemmed | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_short | Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs |
| title_sort | effect of rapid thermal annealing on properties of contacts au-mo-tibx-gaas |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119864 |
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