Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs

Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs

The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:1999
Hauptverfasser: Venger, E.F., Beliaev, A.A., Boltovets, N.S., Ermolovich, I.B., Ivanov, V.N., Konakova, R.V., Milenin, V.V., Voitsikhovski, D.I., Figielski, T., Makosa, A.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119864
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119864
record_format dspace
spelling Venger, E.F.
Beliaev, A.A.
Boltovets, N.S.
Ermolovich, I.B.
Ivanov, V.N.
Konakova, R.V.
Milenin, V.V.
Voitsikhovski, D.I.
Figielski, T.
Makosa, A.
2017-06-10T08:01:34Z
2017-06-10T08:01:34Z
1999
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ.
1560-8034
PACS: 73.30; 85.30.H, K
https://nasplib.isofts.kiev.ua/handle/123456789/119864
The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic.
The work is supported by STCU, project 464.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
spellingShingle Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
Venger, E.F.
Beliaev, A.A.
Boltovets, N.S.
Ermolovich, I.B.
Ivanov, V.N.
Konakova, R.V.
Milenin, V.V.
Voitsikhovski, D.I.
Figielski, T.
Makosa, A.
title_short Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
title_full Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
title_fullStr Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
title_full_unstemmed Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs
title_sort effect of rapid thermal annealing on properties of contacts au-mo-tibx-gaas
author Venger, E.F.
Beliaev, A.A.
Boltovets, N.S.
Ermolovich, I.B.
Ivanov, V.N.
Konakova, R.V.
Milenin, V.V.
Voitsikhovski, D.I.
Figielski, T.
Makosa, A.
author_facet Venger, E.F.
Beliaev, A.A.
Boltovets, N.S.
Ermolovich, I.B.
Ivanov, V.N.
Konakova, R.V.
Milenin, V.V.
Voitsikhovski, D.I.
Figielski, T.
Makosa, A.
publishDate 1999
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid thermal annealing at T = 600 °C during 60 sec in hydrogen atmosphere results in creating the ELS type center in the space charge region of GaAs. This center is represented by the complex VGa+VAs, which has been confirmed by photoluminescence measurements. It causes the appearance of excess current at the initial part of current-voltage characteristic.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119864
citation_txt Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs / E.F. Venger, A.A. Beliaev, N.S. Boltovets, I.B. Ermolovich, V.N. Ivanov, R.V. Konakova, V.V. Milenin, D.I.Voitsikhovski, T. Figielski, A. Makosa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 57-61. — Бібліогр.: 7 назв. — англ.
work_keys_str_mv AT vengeref effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT beliaevaa effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT boltovetsns effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT ermolovichib effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT ivanovvn effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT konakovarv effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT mileninvv effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT voitsikhovskidi effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT figielskit effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
AT makosaa effectofrapidthermalannealingonpropertiesofcontactsaumotibxgaas
first_indexed 2025-12-07T18:39:20Z
last_indexed 2025-12-07T18:39:20Z
_version_ 1850875849910255616

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