Mathematical model of photoacoustic microscopy with piezoelectric detection

Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector in a photoacoustic cell of the respective microscope. The model enables to est...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:1999
Hauptverfasser: Vertsanova, E.V., Yakimenko, Yu.I.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/119867
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Mathematical model of photoacoustic microscopy with piezoelectric detection / E.V. Vertsanova, Yu.I. Yakimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 41-44. — Бібліогр.: 6 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-119867
record_format dspace
spelling Vertsanova, E.V.
Yakimenko, Yu.I.
2017-06-10T08:03:15Z
2017-06-10T08:03:15Z
1999
Mathematical model of photoacoustic microscopy with piezoelectric detection / E.V. Vertsanova, Yu.I. Yakimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 41-44. — Бібліогр.: 6 назв. — англ.
1560-8034
PACS: 61.72; 68.55.L; 78.66
https://nasplib.isofts.kiev.ua/handle/123456789/119867
Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector in a photoacoustic cell of the respective microscope. The model enables to estimate the influence of subsurface defects on the photoacoustical signal and to take into account the contribution of this factor into output signal of investigated objects.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Mathematical model of photoacoustic microscopy with piezoelectric detection
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Mathematical model of photoacoustic microscopy with piezoelectric detection
spellingShingle Mathematical model of photoacoustic microscopy with piezoelectric detection
Vertsanova, E.V.
Yakimenko, Yu.I.
title_short Mathematical model of photoacoustic microscopy with piezoelectric detection
title_full Mathematical model of photoacoustic microscopy with piezoelectric detection
title_fullStr Mathematical model of photoacoustic microscopy with piezoelectric detection
title_full_unstemmed Mathematical model of photoacoustic microscopy with piezoelectric detection
title_sort mathematical model of photoacoustic microscopy with piezoelectric detection
author Vertsanova, E.V.
Yakimenko, Yu.I.
author_facet Vertsanova, E.V.
Yakimenko, Yu.I.
publishDate 1999
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector in a photoacoustic cell of the respective microscope. The model enables to estimate the influence of subsurface defects on the photoacoustical signal and to take into account the contribution of this factor into output signal of investigated objects.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/119867
citation_txt Mathematical model of photoacoustic microscopy with piezoelectric detection / E.V. Vertsanova, Yu.I. Yakimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 41-44. — Бібліогр.: 6 назв. — англ.
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first_indexed 2025-12-01T06:28:58Z
last_indexed 2025-12-01T06:28:58Z
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