Gomeniuk, Y., Lysenko, V., Osiyuk, I., Tyagulski, I., Valakh, M., Yukhimchuk, V., . . . Patel, C. (1999). Properties of SiGe/Si heterostructures fabricated by ion implantation technique. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago Style (17th ed.) CitationGomeniuk, Y.V, V.S Lysenko, I.N Osiyuk, I.P Tyagulski, M.Ya Valakh, V.A Yukhimchuk, M. Willander, and C.J Patel. "Properties of SiGe/Si Heterostructures Fabricated by Ion Implantation Technique." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.
MLA (8th ed.) CitationGomeniuk, Y.V, et al. "Properties of SiGe/Si Heterostructures Fabricated by Ion Implantation Technique." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.
Warning: These citations may not always be 100% accurate.