Gomeniuk, Y., Lysenko, V., Osiyuk, I., Tyagulski, I., Valakh, M., Yukhimchuk, V., . . . Patel, C. (1999). Properties of SiGe/Si heterostructures fabricated by ion implantation technique. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Gomeniuk, Y.V, V.S Lysenko, I.N Osiyuk, I.P Tyagulski, M.Ya Valakh, V.A Yukhimchuk, M. Willander, und C.J Patel. "Properties of SiGe/Si Heterostructures Fabricated by Ion Implantation Technique." Semiconductor Physics Quantum Electronics & Optoelectronics 1999.
MLA-Zitierstil (8. Ausg.)Gomeniuk, Y.V, et al. "Properties of SiGe/Si Heterostructures Fabricated by Ion Implantation Technique." Semiconductor Physics Quantum Electronics & Optoelectronics, 1999.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.