Properties of SiGe/Si heterostructures fabricated by ion implantation technique

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Gomeniuk, Y.V., Lysenko, V.S., Osiyuk, I.N., Tyagulski, I.P., Valakh, M.Ya., Yukhimchuk, V.A., Willander, M., Patel, C.J.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119871
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Properties of SiGe/Si heterostructures fabricated by ion implantation technique / Y.V. Gomeniuk, V.S. Lysenko, I.N. Osiyuk, I.P. Tyagulski, M.Ya. Valakh, V.A. Yukhimchuk, M. Willander, C.J. Patel // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 74-80. — Бібліогр.: 16 назв. — англ.

A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate temperatures (room temperature, 150°C, 450°C and 600°C) have been studied. T...