Conversion efficiency in silicon solar cells with spatially non-uniform doping
The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119872 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Conversion efficiency in silicon solar cells with spatially non-uniform doping / A.V. Sachenko, N.A. Prima, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 32-37. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| Zusammenfassung: | The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact doping ones the conversion efficiency increases as compared to uniform doping case. The dependence of η on Shockley-Reed-Hall carrier lifetimes both in the base and in the top-surface n⁺-layer as well as on the depth of p-n-junction and the shape of electron concentration profile, N(x), in the n⁺-region is analysed.
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| ISSN: | 1560-8034 |