Conversion efficiency in silicon solar cells with spatially non-uniform doping
The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 1999 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/119872 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Conversion efficiency in silicon solar cells with spatially non-uniform doping / A.V. Sachenko, N.A. Prima, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 32-37. — Бібліогр.: 15 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862699832405131264 |
|---|---|
| author | Sachenko, A.V. Prima, N.A. Gorban, A.P. |
| author_facet | Sachenko, A.V. Prima, N.A. Gorban, A.P. |
| citation_txt | Conversion efficiency in silicon solar cells with spatially non-uniform doping / A.V. Sachenko, N.A. Prima, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 32-37. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact doping ones the conversion efficiency increases as compared to uniform doping case. The dependence of η on Shockley-Reed-Hall carrier lifetimes both in the base and in the top-surface n⁺-layer as well as on the depth of p-n-junction and the shape of electron concentration profile, N(x), in the n⁺-region is analysed.
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| first_indexed | 2025-12-07T16:36:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119872 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T16:36:45Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sachenko, A.V. Prima, N.A. Gorban, A.P. 2017-06-10T08:05:41Z 2017-06-10T08:05:41Z 1999 Conversion efficiency in silicon solar cells with spatially non-uniform doping / A.V. Sachenko, N.A. Prima, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 32-37. — Бібліогр.: 15 назв. — англ. 1560-8034 Pacs: 84.60.J; 72.20.J https://nasplib.isofts.kiev.ua/handle/123456789/119872 The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact doping ones the conversion efficiency increases as compared to uniform doping case. The dependence of η on Shockley-Reed-Hall carrier lifetimes both in the base and in the top-surface n⁺-layer as well as on the depth of p-n-junction and the shape of electron concentration profile, N(x), in the n⁺-region is analysed. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Conversion efficiency in silicon solar cells with spatially non-uniform doping Article published earlier |
| spellingShingle | Conversion efficiency in silicon solar cells with spatially non-uniform doping Sachenko, A.V. Prima, N.A. Gorban, A.P. |
| title | Conversion efficiency in silicon solar cells with spatially non-uniform doping |
| title_full | Conversion efficiency in silicon solar cells with spatially non-uniform doping |
| title_fullStr | Conversion efficiency in silicon solar cells with spatially non-uniform doping |
| title_full_unstemmed | Conversion efficiency in silicon solar cells with spatially non-uniform doping |
| title_short | Conversion efficiency in silicon solar cells with spatially non-uniform doping |
| title_sort | conversion efficiency in silicon solar cells with spatially non-uniform doping |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119872 |
| work_keys_str_mv | AT sachenkoav conversionefficiencyinsiliconsolarcellswithspatiallynonuniformdoping AT primana conversionefficiencyinsiliconsolarcellswithspatiallynonuniformdoping AT gorbanap conversionefficiencyinsiliconsolarcellswithspatiallynonuniformdoping |