Conversion efficiency in silicon solar cells with spatially non-uniform doping

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Sachenko, A.V., Prima, N.A., Gorban, A.P.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119872
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Conversion efficiency in silicon solar cells with spatially non-uniform doping / A.V. Sachenko, N.A. Prima, A.P. Gorban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 32-37. — Бібліогр.: 15 назв. — англ.

The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown that at high under-contact doping levels and at relatively low inter-contact...