AES and XPS characterization of TiN layers formed and modified by ion implantation

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 1999
• Hauptverfasser: Melnik, V., Popov, V., Kruger, D., Oberemok, O.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/119873
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: AES and XPS characterization of TiN layers formed and modified by ion implantation / V. Melnik, V. Popov, D. Kruger, O. Oberemok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 81-85. — Бібліогр.: 8 назв. — англ.

Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy (XPS) data. AES shows a strong overlapping of the most intensive peaks of Ti a...