Effect of emitter proprties on the conversion efficiency of silicon solar cells
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119874 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-119874 |
|---|---|
| record_format |
dspace |
| spelling |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. 2017-06-10T08:06:29Z 2017-06-10T08:06:29Z 1999 Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J https://nasplib.isofts.kiev.ua/handle/123456789/119874 The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of emitter proprties on the conversion efficiency of silicon solar cells Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| spellingShingle |
Effect of emitter proprties on the conversion efficiency of silicon solar cells Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| title_short |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_full |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_fullStr |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_full_unstemmed |
Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_sort |
effect of emitter proprties on the conversion efficiency of silicon solar cells |
| author |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| author_facet |
Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| publishDate |
1999 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/119874 |
| citation_txt |
Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |
| work_keys_str_mv |
AT gorbanap effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells AT kostylyovvp effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells AT sachenkoav effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells |
| first_indexed |
2025-12-07T13:22:27Z |
| last_indexed |
2025-12-07T13:22:27Z |
| _version_ |
1850855912517926912 |