Effect of emitter proprties on the conversion efficiency of silicon solar cells
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 1999 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119874 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862620683683495936 |
|---|---|
| author | Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| author_facet | Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| citation_txt | Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent.
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| first_indexed | 2025-12-07T13:22:27Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-119874 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:22:27Z |
| publishDate | 1999 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. 2017-06-10T08:06:29Z 2017-06-10T08:06:29Z 1999 Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 84.60.J, 72.20.J https://nasplib.isofts.kiev.ua/handle/123456789/119874 The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is performed in the approximation when in the region with changing concentration a small part of generated electron-hole pairs recombines. It is shown that, in general, the correlation between h and p-n - junction depth is absent. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of emitter proprties on the conversion efficiency of silicon solar cells Article published earlier |
| spellingShingle | Effect of emitter proprties on the conversion efficiency of silicon solar cells Gorban, A.P. Kostylyov, V.P. Sachenko, A.V. |
| title | Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_full | Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_fullStr | Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_full_unstemmed | Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_short | Effect of emitter proprties on the conversion efficiency of silicon solar cells |
| title_sort | effect of emitter proprties on the conversion efficiency of silicon solar cells |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/119874 |
| work_keys_str_mv | AT gorbanap effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells AT kostylyovvp effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells AT sachenkoav effectofemitterproprtiesontheconversionefficiencyofsiliconsolarcells |