Effect of emitter proprties on the conversion efficiency of silicon solar cells

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 1999
• Main Authors: Gorban, A.P., Kostylyov, V.P., Sachenko, A.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 1999
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/119874
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ.

The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is...