Effect of emitter proprties on the conversion efficiency of silicon solar cells
The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into consideration together with band-to-band Auger recombination. The calculation is...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 1999 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/119874 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Effect of emitter proprties on the conversion efficiency of silicon solar cells / A.P. Gorban, V.P. Kostylyov, A.V. Sachenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 26-31. — Бібліогр.: 13 назв. — англ. |