Review of a monographs
In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device...
Збережено в:
| Дата: | 1999 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Теми: | |
| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/119878 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Review of a monographs / K.D. Glinchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 3. — С. 111. назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation mechanisms in indium phosphide and gallium arsenide Schottky barrier device structures. For barrier contacts with a transition layer the aging mechanisms and role of mass transport in them are discussed. The physico-chemical peculiarities of the metal−InP (GaAs) interface formation, as well as feasibility of prediction of interactions between phases, are considered. |
|---|